MG75Q1ZS50Toshiba - IGBT Power Transistor Module

Specifications: 1200V, 75A

MG75Q1ZS50, Toshiba, Power Module

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MG75Q1ZS50 Description

The Toshiba MG75Q1ZS50 is an IGBT module rated at 1200 V and 75 A, available from USComponent. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG75Q1ZS50.

Target Applications

Toshiba MG75Q1ZS50 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current75 A

Download MG75Q1ZS50 Datasheet

MG75Q1ZS50 PDF Datasheet