MG75Q2YS42 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 75A

MG75Q2YS42, Toshiba, Power Module

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MG75Q2YS42 Description

Rated at 1200 V and 75 A, the Toshiba MG75Q2YS42 is an IGBT module. It is built with two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

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Summary of Features

MG75Q2YS42 is a 1,200 V, 75 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG75Q2YS42 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG75Q2YS42 is a 1,200 V, 75 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)75 A
DatasheetAvailable on this page (PDF)

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