MG50Q1ZS50 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 50A

MG50Q1ZS50, Toshiba, Power Module

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MG50Q1ZS50 Description

Toshiba makes the MG50Q1ZS50, a 1200 V IGBT module. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50Q1ZS50, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG50Q1ZS50 is a 1,200 V, 50 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG50Q1ZS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50Q1ZS50 is a 1,200 V, 50 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)50 A
Isolation voltage2,500 V
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG50Q1ZS50 (reply within 24 hours)

Other Part Numbers

MG50Q1BS1MG50Q1BS11MG50Q2YK1MG50Q2YK9
MG50Q2YS40MG50Q2YS43MG50Q2YS50MG50Q2YS9
MG50Q2YS91MG50Q6ES1MG50Q6ES11MG50Q6ES40
MG50Q6ES41MG50Q6ES50MG50Q6ES50AMG50Q6ES51
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