MG50Q1ZS50 Toshiba - GTR module

MG50Q1ZS50 Description

Toshiba makes the MG50Q1ZS50, a 1200 V IGBT module. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50Q1ZS50, and please confirm ratings against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG50Q1ZS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG50Q1ZS50 is a 1,200 V, 50 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Single
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	50 A
Isolation voltage	2,500 V
Datasheet	Available on this page (PDF)

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