MG50Q1ZS50 Toshiba - IGBT Module
MG50Q1ZS50 Description
Toshiba makes the MG50Q1ZS50, a 1200 V IGBT module. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.
USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG50Q1ZS50, and please confirm ratings against the datasheet before ordering.
Summary of Features
MG50Q1ZS50 is a 1,200 V, 50 A IGBT / power transistor module, single configuration.
Target Applications
Toshiba MG50Q1ZS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.
Key Specifications
MG50Q1ZS50 is a 1,200 V, 50 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | IGBT / power transistor module |
| Configuration | Single |
| Collector-emitter voltage (VCES) | 1,200 V |
| Collector current (IC) | 50 A |
| Isolation voltage | 2,500 V |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for MG50Q1ZS50 (reply within 24 hours)
Related Part Numbers
| MG75Q1ZS50 1200V, 75A | MG100Q1ZS50 1200V, 150A | MG75Q2ZS50 1200V, 300A | MG100Q1ZS9 1200V, 100A |
| MG100Q1ZS40 1200V, 100A | MG200Q1ZS40 1200V, 200A | MG100Q2ZS40 1200V, 100A | MG50Q1BS11 1200V, 50A |
| MG50Q1BS1 1200V, 50A | MG50Q2YK1 1200V, 50A | MG50Q2YK9 50 A, 1200 V | MG50Q2YS40 1200V, 50A |
| MG50Q2YS43 1200V, 50A | MG50Q2YS50 1200V, 78A | MG50Q2YS9 1200V, 50A | MG50Q2YS91 1200V, 50A |

