MG150Q2YK1Toshiba - IGBT Power Transistor Module

Specifications: 1200V, 150A

MG150Q2YK1, Toshiba, Power Module

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MG150Q2YK1 Description

The Toshiba MG150Q2YK1 is an IGBT module rated at 1200 V and 150 A, available from USComponent. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG150Q2YK1.

Target Applications

Toshiba MG150Q2YK1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1200 V
Rated current150 A

Download MG150Q2YK1 Datasheet

MG150Q2YK1 PDF Datasheet