MG150Q2YK1 Toshiba - IGBT Power Transistor Module

MG150Q2YK1 Description

The MG150Q2YK1 from Toshiba is an IGBT module with a 1200 V / 150 A rating. It is built with two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG150Q2YK1; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

Target Applications

Toshiba MG150Q2YK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG150Q2YK1 is a 1,200 V, 150 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	150 A
Datasheet	Available on this page (PDF)

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