MG100Q2YK1 Toshiba - Bipolar Transistor Module

MG100Q2YK1 Description

The Toshiba MG100Q2YK1 is an IGBT / power transistor module, rated for 900 V and 100 A. The module contains two switches in a half-bridge (2-in-1) arrangement. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG100Q2YK1; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

Target Applications

Toshiba MG100Q2YK1 is used for High Power Switching, A.C Motor Controls, D.C Motor Controls, Uninterruptible Power Supply and Motor Brake in Inverter.

Key Specifications

MG100Q2YK1 is a 1,200 V, 100 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	100 A
Datasheet	Available on this page (PDF)

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