MG100Q2YK1 Toshiba - Power Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 900V, 100A

MG100Q2YK1, Toshiba, Power Module

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MG100Q2YK1 Description

The Toshiba MG100Q2YK1 is an IGBT / power transistor module, rated for 900 V and 100 A. The module contains two switches in a half-bridge (2-in-1) arrangement. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG100Q2YK1; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG100Q2YK1 is a 1,200 V, 100 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG100Q2YK1 is used for High Power Switching, A.C Motor Controls, D.C Motor Controls, Uninterruptible Power Supply and Motor Brake in Inverter.

Key Specifications

MG100Q2YK1 is a 1,200 V, 100 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)100 A
DatasheetAvailable on this page (PDF)

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