MG150Q2YS65H Toshiba - IGBT Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 150A/1200V

MG150Q2YS65H GTR module from Toshiba

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MG150Q2YS65H Description

Rated at 1200 V and 150 A, the Toshiba MG150Q2YS65H is an IGBT module. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG150Q2YS65H, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG150Q2YS65H is a 1,200 V, 150 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG150Q2YS65H is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG150Q2YS65H is a 1,200 V, 150 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)150 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG150Q2YS65H (reply within 24 hours)

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