MG150Q2YS65H Toshiba - GTR module

MG150Q2YS65H Description

Rated at 1200 V and 150 A, the Toshiba MG150Q2YS65H is an IGBT module. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG150Q2YS65H, and please confirm ratings against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG150Q2YS65H is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG150Q2YS65H is a 1,200 V, 150 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	150 A
Datasheet	Available on this page (PDF)

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