MG100Q2YS65HToshiba - IGBT Power Transistor Module

MG100Q2YS65H Description

The Toshiba MG100Q2YS65H is an IGBT module rated at 1200 V and 100 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG100Q2YS65H.

Target Applications

Toshiba MG100Q2YS65H is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	100 A

Download MG100Q2YS65H Datasheet

MG100Q2YS65H PDF Datasheet