MG100Q2YS65H Toshiba - IGBT Power Transistor Module

MG100Q2YS65H Description

The Toshiba MG100Q2YS65H is an IGBT module, rated for 1200 V and 100 A. The module contains two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG100Q2YS65H, and please confirm ratings against the datasheet before ordering.

Summary of Features

Target Applications

Toshiba MG100Q2YS65H is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG100Q2YS65H is a 1,200 V, 100 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	100 A
Datasheet	Available on this page (PDF)

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