MG200Q2YS65HToshiba - Power Transistor Module

MG200Q2YS65H Description

MG200Q2YS65H is an insulated gate bipolar transistor (IGBT) designed for high power switching applications. It is capable of handling high voltage and high current loads, making it suitable for use in a variety of industrial and automotive applications. The "MG" in the part number indicates that it is a Mitsubishi Electric IGBT. The "200" indicates the maximum voltage rating of the device, which is 200 volts. The "Q2" indicates the second generation of the device. The "YS65" indicates the maximum current rating of the device, which is 65 amps. The "H" indicates a high-speed switching capability. IGBTs are semiconductor devices that combine the high-speed switching of a transistor with the high-voltage handling capability of a thyristor. They are commonly used in power electronics and motor control applications. The IGBT consists of a MOSFET gate control, a bipolar transistor output, and a diode for freewheeling current. The MG200Q2YS65H IGBT is designed with a high-speed switching capability, making it ideal for applications requiring fast switching times. Its high voltage and current handling capabilities also make it suitable for use in high power applications such as motor drives and power converters.

Summary of Features

Target Applications

Toshiba MG200Q2YS65H is used for High Power and High Speed Switching.

Key Specifications

MG200Q2YS65H is a 1,200 V, 200 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	200 A
Datasheet	Available on this page (PDF)

Download MG200Q2YS65H Datasheet

MG200Q2YS65H PDF Datasheet