MG100Q2YS40 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 100A

MG100Q2YS40, Toshiba, Power Module

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MG100Q2YS40 Description

The Toshiba MG100Q2YS40 is an IGBT module, rated for 1200 V and 100 A. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

Request a quote for the MG100Q2YS40 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

MG100Q2YS40 is a 1,200 V, 100 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG100Q2YS40 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG100Q2YS40 is a 1,200 V, 100 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)100 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG100Q2YS40 (reply within 24 hours)