MG300Q2YS40 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 300A

MG300Q2YS40, TOSHIBA, GTR Module Silicon N Channel IGBT

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MG300Q2YS40 Description

MG300Q2YS40 is a 1200 V, 300 A IGBT module made by Toshiba. The module contains two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters. Production of many older modules has ended, but we keep sourcing them for repair and maintenance customers.

We help engineers and repair technicians find parts like the MG300Q2YS40, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Target Applications

Toshiba MG300Q2YS40 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-109D2A
VCES1200 V
IC300 A (DC)
ICP600 A (1 ms)
VCE(sat) max.4.0 V
Collector power dissipation1800 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight550 g
Junction temperature150 °C max.

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