MG75Q2YS11Toshiba - IGBT Module

MG75Q2YS11 Description

The Toshiba MG75Q2YS11 is an IGBT module rated at 1200 V and 75 A, available from USComponent. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG75Q2YS11.

Target Applications

Toshiba MG75Q2YS11 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-108A2A
VCES	1200 V
IC	75 A (DC)
ICP	150 A (1 ms)
VCE(sat) max.	2.7 V
Collector power dissipation	600 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	240 g
Junction temperature	150 °C max.

MG75Q2YS11 Video

Download MG75Q2YS11 Datasheet

MG75Q2YS11 PDF Datasheet