MG100Q2YS11 Toshiba - Bipolar Transistor Module

MG100Q2YS11 Description

Rated at 1200 V and 100 A, the Toshiba MG100Q2YS11 is an IGBT module. It is built with two switches in a half-bridge (2-in-1) arrangement. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

Request a quote for the MG100Q2YS11 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

Target Applications

Toshiba MG100Q2YS11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG100Q2YS11 is a 1,200 V, 100 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,200 V
Collector current (IC)	100 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG100Q2YS11 (reply within 24 hours)