MG100Q1JS50 Toshiba - Power Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200(V) / 100(A)

MG100Q1JS50 IGBT Power Transistor Module from Toshiba

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MG100Q1JS50 Description

The MG100Q1JS50 from Toshiba is a Darlington transistor module with a 1200 V / 100 A rating. You will mostly see it in older AC drives, servo amplifiers and UPS systems, where a like-for-like replacement keeps the machine running.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG100Q1JS50, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

IGBT Module

Target Applications

Toshiba MG100Q1JS50 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
CategoryPower Transistor Modules
Rated voltage1200 V
Rated current100 A