MG100Q2YS42Toshiba - IGBT Module

Specifications: 1200V, 100A

MG100Q2YS42, TOSHIBA, GTR Module Silicon N Channel IGBT

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MG100Q2YS42 Description

Toshiba MG100Q2YS42 is an IGBT module rated at 1200 V and 100 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG100Q2YS42.

Target Applications

Toshiba MG100Q2YS42 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
ConfigurationDual IGBT module (complete half bridge) with free-wheeling diodes
PackageToshiba 2-109C1A
VCES1200 V
IC100 A (DC)
ICP200 A (1 ms)
VCE(sat) max.4.0 V
Collector power dissipation700 W
Isolation voltage2500 V (AC, 1 min)
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight430 g
Junction temperature150 °C max.

MG100Q2YS42 Video

Download MG100Q2YS42 Datasheet

MG100Q2YS42 PDF Datasheet