F3L8MXTR12C2M2_H11 Infineon - IGBT Module

Also written as: F3L8MXTR12C2M2-H11

Category: IGBT Modules

Specifications: 1200V, 75A

F3L8MXTR12C2M2_H11 Infineon IGBT Module

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F3L8MXTR12C2M2_H11 Description

F3L8MXTR12C2M2_H11 is a 1200 V / 75 A 3-level IGBT module from Infineon Technologies. Typical applications: high-frequency switching application, DC/DC converter, DC charger for EV.

USComponent supplies F3L8MXTR12C2M2_H11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low inductive design
  • Low switching losses
  • High current density
  • PressFIT contact technology
  • Integrated NTC temperature sensor

Target Applications

Infineon F3L8MXTR12C2M2_H11 is used for High-frequency switching application, DC/DC converter, DC charger for EV.

Key Specifications

F3L8MXTR12C2M2_H11 is a 1200 V / 75 A 3-level IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
Configuration3-level
Drain-source voltage (VDSS)1200 V
Nominal drain current (ID nom)75 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for F3L8MXTR12C2M2_H11 (reply within 24 hours)

Related Part Numbers

F3L8MXTR12C2M2Q_H11
1200V, 75A		F3L8MR12W2M1HP_B11
1200V, 100A		F3L80R12W1H3_B11
1200V, 80A		F3L75R12W1H3_B27
1200V, 75A
F3L75R12W1H3_B11
1200V, 75A		F3L75R07W2E3_B11
650V, 75A		F3L6MR20W2M1H_B70
2000V, 100A		F3L600R10W4S7F_H11
950V, 600A
F3L600R10W4S7F_C22
950V, 600A		F3L600R10N3S7F
950V, 600A		F3L50R06W1E3_B11
600V, 50A		F3L500R12W3H7_H20
1200V, 500A
F3L500R12W3H7_H11
1200V, 500A		F3L500R12N3H7_B66
1200V, 510A		F3L500R12N3H7F_B66
1200V, 510A		F3L420R12W4H7_H11
1200V, 250A
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