F3L75R12W1H3_B27 Infineon - IGBT Module
Also written as: F3L75R12W1H3-B27
F3L75R12W1H3_B27 Description
F3L75R12W1H3_B27 is a 1200 V / 75 A 3-level IGBT module from Infineon Technologies. Typical applications: solar applications.
USComponent supplies F3L75R12W1H3_B27 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- High speed IGBT H3
- Low inductive design
- Low switching losses
- Low Veesat
- 3 kV AC 1min insulation
- Al2O33 substrate with low thermal resistance
- Compact design
Target Applications
Infineon F3L75R12W1H3_B27 is used for Solar applications.
Key Specifications
F3L75R12W1H3_B27 is a 1200 V / 75 A 3-level IGBT module from Infineon Technologies. Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | 3-level |
| Collector-emitter voltage (VCES) | 1200 V |
| Nominal collector current (IC nom) | 75 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for F3L75R12W1H3_B27 (reply within 24 hours)

