F3L8MR12W2M1HP_B11 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 100A

F3L8MR12W2M1HP_B11 Infineon SiC MOSFET Module

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F3L8MR12W2M1HP_B11 Description

F3L8MR12W2M1HP_B11 is a 1200 V, 100 A Infineon EasyPACK SiC MOSFET module (3-level), used for solar applications, three-level applications, DC charger for EV.

USComponent supplies F3L8MR12W2M1HP_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • 1,200 V / 100 A 3-level SiC MOSFET module
  • CoolSiC Trench MOSFET (M1H)
  • EasyPACK housing
  • Low switching losses for high-frequency operation
  • PressFIT contact technology
  • Pre-applied thermal interface material (TIM)

Target Applications

Infineon F3L8MR12W2M1HP_B11 is used for solar applications, three-level applications and DC charger for EV.

Key Specifications

F3L8MR12W2M1HP_B11 is a 1,200 V, 100 A Infineon EasyPACK SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
Configuration3-level (NPC) module
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)100 A
TechnologyCoolSiC Trench MOSFET (M1H)
PackageEasyPACK

Technical document (PDF)  |  Request a quote for F3L8MR12W2M1HP_B11 (reply within 24 hours)

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