F3L8MR12W2M1HP_B11 Infineon - SiC MOSFET Module
F3L8MR12W2M1HP_B11 Description
F3L8MR12W2M1HP_B11 is a 1200 V, 100 A Infineon EasyPACK SiC MOSFET module (3-level), used for solar applications, three-level applications, DC charger for EV.
USComponent supplies F3L8MR12W2M1HP_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- 1,200 V / 100 A 3-level SiC MOSFET module
- CoolSiC Trench MOSFET (M1H)
- EasyPACK housing
- Low switching losses for high-frequency operation
- PressFIT contact technology
- Pre-applied thermal interface material (TIM)
Target Applications
Infineon F3L8MR12W2M1HP_B11 is used for Solar applications, three-level applications, DC charger for EV.
Key Specifications
F3L8MR12W2M1HP_B11 is a 1,200 V, 100 A Infineon EasyPACK SiC MOSFET module. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | SiC MOSFET module |
| Configuration | 3-level (NPC) module |
| Drain-source voltage (VDSS) | 1,200 V |
| Drain current (IDN) | 100 A |
| Technology | CoolSiC Trench MOSFET (M1H) |
| Package | EasyPACK |
Technical document (PDF) | Request a quote for F3L8MR12W2M1HP_B11 (reply within 24 hours)

