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F3L8MXTR12C2M2Q_H11 Infineon - IGBT Module
Also written as: F3L8MXTR12C2M2Q-H11
F3L8MXTR12C2M2Q_H11 Description
F3L8MXTR12C2M2Q_H11 is a 1200 V / 75 A 3-level IGBT module from Infineon Technologies. Typical applications: high-frequency switching application, DC/DC converter, DC charger for EV.
USComponent supplies F3L8MXTR12C2M2Q_H11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- Low inductive design
- Low switching losses
- High current density
- PressFIT contact technology
- Integrated NTC temperature sensor
Target Applications
Infineon F3L8MXTR12C2M2Q_H11 is used for High-frequency switching application, DC/DC converter, DC charger for EV.
Key Specifications
F3L8MXTR12C2M2Q_H11 is a 1200 V / 75 A 3-level IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | 3-level |
| Drain-source voltage (VDSS) | 1200 V |
| Nominal drain current (ID nom) | 75 A |
| Package | EasyPACK |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for F3L8MXTR12C2M2Q_H11 (reply within 24 hours)
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