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F3L6MR20W2M1H_B70 Infineon - SiC MOSFET Module
Also written as: F3L6MR20W2M1H-B70
F3L6MR20W2M1H_B70 Description
F3L6MR20W2M1H_B70 is a 2000 V / 100 A 3-level CoolSiC MOSFET module from Infineon Technologies. Typical applications: EV charging, Three-level applications, Energy storage systems (ESS), Solar applications.
USComponent supplies F3L6MR20W2M1H_B70 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- Overload operation up to 175°C
- AlN substrate with low thermal resistance
- High creepage and clearance distances
- Integrated NTC temperature sensor
- PressFIT contact technology
Target Applications
Infineon F3L6MR20W2M1H_B70 is used for EV charging, Three-level applications, Energy storage systems (ESS), Solar applications.
Key Specifications
F3L6MR20W2M1H_B70 is a 2000 V / 100 A 3-level CoolSiC MOSFET module from Infineon Technologies (EasyPACK 2B package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | CoolSiC MOSFET module |
| Configuration | 3-level |
| Drain-source voltage (VDSS) | 2000 V |
| Nominal drain current (ID nom) | 100 A |
| Package | EasyPACK 2B |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for F3L6MR20W2M1H_B70 (reply within 24 hours)
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