MG800J1US52Toshiba - IGBT Power Transistor Module

MG800J1US52 Description

The Toshiba MG800J1US52 is an IGBT module rated at 600 V and 800 A. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG800J1US52.

Target Applications

Toshiba MG800J1US52 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	600 V
Rated current	800 A

Download MG800J1US52 Datasheet

MG800J1US52 PDF Datasheet