MG800J1US51Toshiba - IGBT Module

MG800J1US51 Description

The Toshiba MG800J1US51 is an IGBT module rated at 600 V and 800 A. Typical applications for this type of device include variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG800J1US51.

Target Applications

Toshiba MG800J1US51 is used for High Power Switching and Motor Control Applications.

Key Specifications

Toshiba MG800J1US51 is a single IGBT module (silicon N-channel IGBT with anti-parallel diode) for high power switching and motor control. Electrodes are isolated from the case. Values at Ta = 25°C unless noted. Source: Toshiba datasheet, 1997-03-03.

Parameter	Symbol	Condition	Value
Maximum Ratings
Collector-emitter voltage	VCES		600 V
Gate-emitter voltage	VGES		±20 V
Collector current	IC	DC	800 A
Collector current, pulsed	ICP	1 ms	1600 A
Forward current (diode)	IF	DC	800 A
Forward current (diode), pulsed	IFM	1 ms	1600 A
Collector power dissipation	PC	Tc = 25°C	2800 W
Junction temperature	Tj		150°C
Storage temperature range	Tstg		−40 to 125°C
Isolation voltage	VIsol	AC, 1 min	2500 V
Screw torque		Terminal M4 / M6 / Mounting	2 / 3 / 3 N·m
Electrical Characteristics
Gate leakage current	IGES	VGE = ±20 V, VCE = 0	±500 nA max
Collector cut-off current	ICES	VCE = 600 V, VGE = 0	6.0 mA max
Gate-emitter cut-off voltage	VGE(off)	IC = 80 mA, VCE = 5 V	5.0 min / 7.0 typ / 8.0 max V
Collector-emitter saturation voltage	VCE(sat)	IC = 800 A, VGE = 15 V	2.10 typ / 2.70 max V
Input capacitance	Cies	VCE = 10 V, VGE = 0, f = 1 MHz	85200 pF typ
Turn-on delay time	td(on)	Inductive load, VCC = 300 V, IC = 800 A, VGE = ±15 V, RG = 1 Ω	0.20 µs typ
Rise time	tr		0.25 µs typ
Turn-on time	ton		0.60 µs typ
Turn-off delay time	td(off)		0.30 typ / 0.60 max µs
Fall time	tf		0.15 typ / 0.30 max µs
Turn-off time	toff		0.60 typ / 1.00 max µs
Forward voltage (diode)	VF	IF = 800 A, VGE = 0	2.30 typ / 3.00 max V
Reverse recovery time (diode)	trr	IF = 800 A, VGE = −10 V, di/dt = 800 A/µs	0.08 typ / 0.15 max µs
Thermal resistance, IGBT	Rth(j-c)	Transistor stage	0.045°C/W max
Thermal resistance, diode	Rth(j-c)	Diode stage	0.10°C/W max
Package
Outline		Toshiba 2-109E1A	108 × 66 mm (base)

Download MG800J1US51 Datasheet

MG800J1US51 PDF Datasheet