MG800J1US51 Toshiba - IGBT Module

Category: IGBT Modules

Specifications: 600V, 800A

MG800J1US51, Toshiba, GTR Module Silicon N Channel IGBT

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

MG800J1US51 Description

MG800J1US51 is a 600 V, 800 A IGBT module made by Toshiba. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

We help engineers and repair technicians find parts like the MG800J1US51, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Target Applications

Toshiba MG800J1US51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Toshiba MG800J1US51 is a single IGBT module (silicon N-channel IGBT with anti-parallel diode) for high power switching and motor control. Electrodes are isolated from the case. Values at Ta = 25°C unless noted. Source: Toshiba datasheet, 1997-03-03.

ParameterSymbolConditionValue
Maximum Ratings
Collector-emitter voltageVCES600 V
Gate-emitter voltageVGES±20 V
Collector currentICDC800 A
Collector current, pulsedICP1 ms1600 A
Forward current (diode)IFDC800 A
Forward current (diode), pulsedIFM1 ms1600 A
Collector power dissipationPCTc = 25°C2800 W
Junction temperatureTj150°C
Storage temperature rangeTstg−40 to 125°C
Isolation voltageVIsolAC, 1 min2500 V
Screw torqueTerminal M4 / M6 / Mounting2 / 3 / 3 N·m
Electrical Characteristics
Gate leakage currentIGESVGE = ±20 V, VCE = 0±500 nA max
Collector cut-off currentICESVCE = 600 V, VGE = 06.0 mA max
Gate-emitter cut-off voltageVGE(off)IC = 80 mA, VCE = 5 V5.0 min / 7.0 typ / 8.0 max V
Collector-emitter saturation voltageVCE(sat)IC = 800 A, VGE = 15 V2.10 typ / 2.70 max V
Input capacitanceCiesVCE = 10 V, VGE = 0, f = 1 MHz85200 pF typ
Turn-on delay timetd(on)Inductive load, VCC = 300 V, IC = 800 A, VGE = ±15 V, RG = 1 Ω0.20 µs typ
Rise timetr0.25 µs typ
Turn-on timeton0.60 µs typ
Turn-off delay timetd(off)0.30 typ / 0.60 max µs
Fall timetf0.15 typ / 0.30 max µs
Turn-off timetoff0.60 typ / 1.00 max µs
Forward voltage (diode)VFIF = 800 A, VGE = 02.30 typ / 3.00 max V
Reverse recovery time (diode)trrIF = 800 A, VGE = −10 V, di/dt = 800 A/µs0.08 typ / 0.15 max µs
Thermal resistance, IGBTRth(j-c)Transistor stage0.045°C/W max
Thermal resistance, diodeRth(j-c)Diode stage0.10°C/W max
Package
OutlineToshiba 2-109E1A108 × 66 mm (base)

Technical document (PDF)  |  Request a quote for MG800J1US51 (reply within 24 hours)

Related Part Numbers

MG800J1US52
600V, 800A		MG600J1US51
600V, 600A		MG400J1US51
600V, 400A		MG300J1US51
600V, 300A
MG400J1US41
600V, 400A		MG400J1US50
600V, 400A		MG400J1US1
600V, 400A		MG400J1US11
400A/600V
MG800J1US52AMG800J1US59AMG800J2YS50AMG800FXF1US53
MG80S2YK1MG8G6EM1MG8G6M1MG8J6ES1
  • Young & New Century, LLC BBB Business Review

Why buy from USComponent

  • In business since 2001
  • Quote within 24 hours
  • Discontinued & hard-to-find parts
  • Quality-checked before shipping
  • Overnight delivery available
  • BBB A+ rated