MG800J1US51 Toshiba - IGBT Module

Category: IGBT Modules

Specifications: 600V, 800A

MG800J1US51, Toshiba, GTR Module Silicon N Channel IGBT

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MG800J1US51 Description

MG800J1US51 is a 600 V, 800 A IGBT module made by Toshiba. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Target Applications

Toshiba MG800J1US51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

Toshiba MG800J1US51 is a single IGBT module (silicon N-channel IGBT with anti-parallel diode) for high power switching and motor control. Electrodes are isolated from the case. Values at Ta = 25°C unless noted. Source: Toshiba datasheet, 1997-03-03.

ParameterSymbolConditionValue
Maximum Ratings
Collector-emitter voltageVCES600 V
Gate-emitter voltageVGES±20 V
Collector currentICDC800 A
Collector current, pulsedICP1 ms1600 A
Forward current (diode)IFDC800 A
Forward current (diode), pulsedIFM1 ms1600 A
Collector power dissipationPCTc = 25°C2800 W
Junction temperatureTj150°C
Storage temperature rangeTstg−40 to 125°C
Isolation voltageVIsolAC, 1 min2500 V
Screw torqueTerminal M4 / M6 / Mounting2 / 3 / 3 N·m
Electrical Characteristics
Gate leakage currentIGESVGE = ±20 V, VCE = 0±500 nA max
Collector cut-off currentICESVCE = 600 V, VGE = 06.0 mA max
Gate-emitter cut-off voltageVGE(off)IC = 80 mA, VCE = 5 V5.0 min / 7.0 typ / 8.0 max V
Collector-emitter saturation voltageVCE(sat)IC = 800 A, VGE = 15 V2.10 typ / 2.70 max V
Input capacitanceCiesVCE = 10 V, VGE = 0, f = 1 MHz85200 pF typ
Turn-on delay timetd(on)Inductive load, VCC = 300 V, IC = 800 A, VGE = ±15 V, RG = 1 Ω0.20 µs typ
Rise timetr0.25 µs typ
Turn-on timeton0.60 µs typ
Turn-off delay timetd(off)0.30 typ / 0.60 max µs
Fall timetf0.15 typ / 0.30 max µs
Turn-off timetoff0.60 typ / 1.00 max µs
Forward voltage (diode)VFIF = 800 A, VGE = 02.30 typ / 3.00 max V
Reverse recovery time (diode)trrIF = 800 A, VGE = −10 V, di/dt = 800 A/µs0.08 typ / 0.15 max µs
Thermal resistance, IGBTRth(j-c)Transistor stage0.045°C/W max
Thermal resistance, diodeRth(j-c)Diode stage0.10°C/W max
Package
OutlineToshiba 2-109E1A108 × 66 mm (base)

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Related Part Numbers

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