MG300Q2YS40-45 Toshiba - Power Transistor Module

Also written as: MG300Q2YS40/45

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 300A

MG300Q2YS40-45, Toshiba, Power Module

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MG300Q2YS40-45 Description

The MG300Q2YS40-45 from Toshiba is an IGBT / power transistor module with a 1200 V / 300 A rating. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Modules of this type were widely used in motor drives, UPS units and power supplies, and many are still running in older equipment today.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG300Q2YS40-45 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

MG300Q2YS40-45 is a 1,200 V, 300 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG300Q2YS40-45 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG300Q2YS40-45 is a 1,200 V, 300 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)300 A
DatasheetAvailable on this page (PDF)

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