MG300Q1US41Toshiba - Power Transistor Module

MG300Q1US41 Description

The Toshiba MG300Q1US41 is a power semiconductor module rated at 1200 V and 300 A. Typical applications for this type of component include motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG300Q1US41.

Target Applications

Toshiba MG300Q1US41 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Single IGBT with free-wheeling diode
Package	Toshiba 2-109A4A
VCES	1200 V
ICP	600 A (1 ms)
VCE(sat) max.	4.0 V @ 300 A (typ. 3.0 V)
Screw torque	Terminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Weight	465 g
Junction temperature	150 °C max.

MG300Q1US41 Video

Download MG300Q1US41 Datasheet

MG300Q1US41 PDF Datasheet