MG300Q2YS60A Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1200V, 300A

MG300Q2YS60A, Toshiba, Power Module

We beat competitor's price with faster delivery.

For 6 pieces or more, submit your inquiry here, email to sales@uscomponent.com or call 1-281-968-0718

MG300Q2YS60A Description

The Toshiba MG300Q2YS60A is an IGBT module, rated for 1200 V and 300 A. The module contains two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG300Q2YS60A and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

MG300Q2YS60A is a 1,200 V, 300 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG300Q2YS60A is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG300Q2YS60A is a 1,200 V, 300 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)300 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG300Q2YS60A (reply within 24 hours)