MG300Q1US51Toshiba - GTR module

Specifications: 300-400A/1200V

MG300Q1US51 GTR module from Toshiba

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MG300Q1US51 Description

The Toshiba MG300Q1US51 is a bipolar power transistor module rated at 1200 V and 400 A. Typical applications for this type of device include motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG300Q1US51.

Summary of Features

GTR Module Silicon N Channel IGBT

Target Applications

Toshiba MG300Q1US51 is used for High Power Switching Applications Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryGTR module
Rated voltage1200 V
Rated current400 A

Download MG300Q1US51 Datasheet

MG300Q1US51 PDF Datasheet