MG300Q1US11 Toshiba - Power Transistor Module

MG300Q1US11 Description

MG300Q1US11 is a 1200 V, 300 A IGBT module made by Toshiba. It is built with a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Target Applications

Toshiba MG300Q1US11 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Single IGBT with free-wheeling diode
VCES	1200 V
IC	300 A (DC)
ICP	600 A (1 ms)
VCE(sat) max.	2.7 V
Collector power dissipation	2000 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Junction temperature	150 °C max.

MG300Q1US11 Video

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