MG300Q1US11Toshiba - Power Transistor Module

MG300Q1US11 Description

The Toshiba MG300Q1US11 is a power semiconductor module rated at 1200 V and 300 A. Components of this type are commonly used in motor drives, power conversion and industrial control equipment.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG300Q1US11.

Target Applications

Toshiba MG300Q1US11 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Single IGBT with free-wheeling diode
VCES	1200 V
IC	300 A (DC)
ICP	600 A (1 ms)
VCE(sat) max.	2.7 V
Collector power dissipation	2000 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal M4 / M6 / mounting: 2 / 3 / 3 N·m
Junction temperature	150 °C max.

MG300Q1US11 Video

Download MG300Q1US11 Datasheet

MG300Q1US11 PDF Datasheet