MG600Q1US51 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 600A

MG600Q1US51, Toshiba, Power Module

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MG600Q1US51 Description

Toshiba MG600Q1US51 is an IGBT module rated at 1200 V and 600 A. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

We help engineers and repair technicians find parts like the MG600Q1US51, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Target Applications

Toshiba MG600Q1US51 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

ManufacturerToshiba
ConfigurationIGBT module
PackageToshiba 2-109F3A
VCES1200 V
ICP1200 A (1 ms)
VCE(sat) max.3.6 V
Screw torqueTerminal / mounting: 3 / 3 N·m
Weight465 g
Junction temperature150 °C max.

MG600Q1US51 Video

MG600Q1US51 video

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