MG600Q1US51Toshiba - GTR module

MG600Q1US51 Description

The Toshiba MG600Q1US51 is a bipolar power transistor module rated at 1200 V and 600 A, available from USComponent. Typical applications for this type of device include motor drives, switching regulators, UPS systems and power supplies, particularly in older equipment that is still in service.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG600Q1US51.

Target Applications

Toshiba MG600Q1US51 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	IGBT module
Package	Toshiba 2-109F3A
VCES	1200 V
ICP	1200 A (1 ms)
VCE(sat) max.	3.6 V
Screw torque	Terminal / mounting: 3 / 3 N·m
Weight	465 g
Junction temperature	150 °C max.

MG600Q1US51 Video

Download MG600Q1US51 Datasheet

MG600Q1US51 PDF Datasheet