MG25N2YS1 Toshiba - Power Transistor Module

MG25N2YS1 Description

The Toshiba MG25N2YS1 is an IGBT module, rated for 1100 V and 25 A. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG25N2YS1, and please confirm ratings against the datasheet before ordering.

Target Applications

Toshiba MG25N2YS1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes (GTR module)
Package	Toshiba 2-94C3A
VCES	1000 V
IC	25 A (DC)
ICP	50 A (1 ms)
VCE(sat) max.	5.0 V
Collector power dissipation	200 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 30 / 30 kg·cm
Weight	222 g
Junction temperature	150 °C max.

MG25N2YS1 Video

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