MG25N2YS1Toshiba - Power Transistor Module

MG25N2YS1 Description

The Toshiba MG25N2YS1 is a power semiconductor module rated at 1100 V and 25 A, available from USComponent. Components of this type are commonly used in motor drives, power conversion and industrial control equipment.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG25N2YS1.

Target Applications

Toshiba MG25N2YS1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes (GTR module)
Package	Toshiba 2-94C3A
VCES	1000 V
IC	25 A (DC)
ICP	50 A (1 ms)
VCE(sat) max.	5.0 V
Collector power dissipation	200 W
Isolation voltage	2500 V (AC, 1 min)
Screw torque	Terminal / mounting: 30 / 30 kg·cm
Weight	222 g
Junction temperature	150 °C max.

MG25N2YS1 Video

Download MG25N2YS1 Datasheet

MG25N2YS1 PDF Datasheet