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MG25N2YK1Toshiba - IGBT Power Transistor Module

Specifications: 1100V, 25A

MG25N2YK1, Toshiba, Power Module

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MG25N2YK1 Description

The Toshiba MG25N2YK1 is an IGBT module rated at 1100 V and 25 A, available from USComponent. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG25N2YK1.

Target Applications

Toshiba MG25N2YK1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1100 V
Rated current25 A

Download MG25N2YK1 Datasheet

MG25N2YK1 PDF Datasheet