MG25N1JS1 Toshiba - IGBT Power Transistor Module

Category: IGBT Modules

Specifications: 1000V, 25A

MG25N1JS1, Toshiba, Power Module

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MG25N1JS1 Description

MG25N1JS1 is a 1000 V, 25 A IGBT module made by Toshiba. Inside, it has a single switch with its freewheeling diode (1-in-1). Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

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Summary of Features

MG25N1JS1 is a 1,000 V, 25 A IGBT / power transistor module, single configuration.

Target Applications

Toshiba MG25N1JS1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG25N1JS1 is a 1,000 V, 25 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSingle
Collector-emitter voltage (VCES)1,000 V
Collector current (IC)25 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG25N1JS1 (reply within 24 hours)

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