MG25N1BS1 Toshiba - IGBT Power Transistor Module

MG25N1BS1 Description

The Toshiba MG25N1BS1 is an IGBT module, rated for 1000 V and 25 A. It is built with a single switch with its freewheeling diode (1-in-1). Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the MG25N1BS1 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

Target Applications

Toshiba MG25N1BS1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG25N1BS1 is a 1,000 V, 25 A IGBT / power transistor module, single configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Single
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	25 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG25N1BS1 (reply within 24 hours)