MG25N1BS1Toshiba - IGBT Power Transistor Module

MG25N1BS1 Description

Toshiba MG25N1BS1 is an IGBT module rated at 1000 V and 25 A. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent supplies power semiconductors and industrial electronic components to engineers, OEMs and maintenance teams worldwide, including legacy and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG25N1BS1.

Target Applications

Toshiba MG25N1BS1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1000 V
Rated current	25 A

Download MG25N1BS1 Datasheet

MG25N1BS1 PDF Datasheet