MG50N2YS1 Toshiba - IGBT Power Transistor Module

MG50N2YS1 Description

The MG50N2YS1 from Toshiba is an IGBT module with a 1000 V / 50 A rating. Inside, it has two switches in a half-bridge (2-in-1) arrangement. Modules like this do the heavy switching in motor drives, UPS systems, induction heaters and renewable-energy inverters.

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Summary of Features

Target Applications

Toshiba MG50N2YS1 is used for high power switching applications. Motor control applications.

Key Specifications

MG50N2YS1 is a 1,000 V, 50 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	50 A
Datasheet	Available on this page (PDF)

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