MG50N2YS1Toshiba - IGBT Power Transistor Module

MG50N2YS1 Description

The Toshiba MG50N2YS1 is an IGBT module rated at 1000 V and 50 A. Components of this type are commonly used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Target Applications

Toshiba MG50N2YS1 is used for high power switching applications. Motor control applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1000 V
Rated current	50 A

Download MG50N2YS1 Datasheet

MG50N2YS1 PDF Datasheet