MG25N2YS51 Toshiba - IGBT Module

Category: IGBT Modules

Specifications: 1000V, 25A

MG25N2YS51, TOSHIBA, IGBT Module

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MG25N2YS51 Description

Rated at 1000 V and 25 A, the Toshiba MG25N2YS51 is an IGBT module. The module contains two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

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Summary of Features

MG25N2YS51 is a 1,000 V, 25 A IGBT / power transistor module, dual configuration.

Target Applications

Toshiba MG25N2YS51 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG25N2YS51 is a 1,000 V, 25 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationDual
Collector-emitter voltage (VCES)1,000 V
Collector current (IC)25 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG25N2YS51 (reply within 24 hours)

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