MG100N2YS1Toshiba - IGBT Power Transistor Module

Specifications: 1000V, 100A

MG100N2YS1, Toshiba, Power Module

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MG100N2YS1 Description

The Toshiba MG100N2YS1 is an IGBT module rated at 1000 V and 100 A, available from USComponent. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

USComponent, a BBB A+ accredited business, helps engineers and maintenance teams source power semiconductors and industrial components, including older and hard-to-find part numbers. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG100N2YS1.

Target Applications

Toshiba MG100N2YS1 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

ManufacturerToshiba
CategoryIGBT Power Transistor Module
Rated voltage1000 V
Rated current100 A

Download MG100N2YS1 Datasheet

MG100N2YS1 PDF Datasheet