MG100N2YS1 Toshiba - IGBT Power Transistor Module

MG100N2YS1 Description

Rated at 1000 V and 100 A, the Toshiba MG100N2YS1 is an IGBT module. It is built with two switches in a half-bridge (2-in-1) arrangement. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG100N2YS1, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

Target Applications

Toshiba MG100N2YS1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG100N2YS1 is a 1,000 V, 100 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	100 A
Datasheet	Available on this page (PDF)

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