MG75N2YS1 Toshiba - IGBT Power Transistor Module

MG75N2YS1 Description

Toshiba MG75N2YS1 is an IGBT module rated at 1000 V and 75 A. The module contains two switches in a half-bridge (2-in-1) arrangement. It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

Request a quote for the MG75N2YS1 and our team will get back to you with price, quantity available and lead time. We ship worldwide. As with any power device, please check the manufacturer's datasheet to confirm it matches your design.

Summary of Features

Target Applications

Toshiba MG75N2YS1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG75N2YS1 is a 1,000 V, 75 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	75 A
Datasheet	Available on this page (PDF)

Technical document (PDF)  |  Request a quote for MG75N2YS1 (reply within 24 hours)