MG25N2CK1 Toshiba - Bipolar Transistor Module

MG25N2CK1 Description

Rated at 1000 V and 25 A, the Toshiba MG25N2CK1 is an IGBT module. Inside, it has two switches in a half-bridge (2-in-1) arrangement. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent has sourced power semiconductors for maintenance teams and OEMs since 2001. For price and availability of the MG25N2CK1, send us a request for quote. Please confirm the specifications against the manufacturer's datasheet before purchase.

Summary of Features

Target Applications

Toshiba MG25N2CK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG25N2CK1 is a 1,000 V, 25 A IGBT / power transistor module, dual configuration. Source: manufacturer datasheet.

Parameter	Value
Product type	IGBT / power transistor module
Configuration	Dual
Collector-emitter voltage (VCES)	1,000 V
Collector current (IC)	25 A
Datasheet	Available on this page (PDF)

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