DF80R12W2H3_B11 Infineon - IGBT Module
DF80R12W2H3_B11 Description
Rated at 1200 V and 80 A, the Infineon Technologies DF80R12W2H3_B11 is an IGBT. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.
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Summary of Features
- High Speed IGBT H3
- Low Switching Losses
- Al2O3 Substrate with Low Thermal Resistance
- Integrated NTC temperature sensor
- Compact design
- PressFIT Contact Technology
Target Applications
Infineon DF80R12W2H3_B11 is used for solar applications and UPS systems.
Key Specifications
DF80R12W2H3_B11 is a 1,200 V, 80 A diode. Source: manufacturer datasheet.
| Parameter | Value |
|---|---|
| Product type | Diode |
| Repetitive peak reverse voltage (VRRM) | 1,200 V |
| Rated forward / output current | 80 A |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for DF80R12W2H3_B11 (reply within 24 hours)
Related Part Numbers
| DF120R12W2H3_B27 1200V, 40A | DF200R07W2H3_B77 650V, 100A | DF200R12W1H3_B27 1200V, 30A | DF300R07W2H3_B77 650V, 150A |
| DF80R12W2H3F_B11 1200V, 80A | DF80R07W1H5FP_B11 650V, 40A | DF8MR12W1M1HF_B67 1200V, 50A | DF900R12IP4D 1200V, 900A |
| DF900R12IP4DV 1200V, 900A | DF75R12W1H4F_B11 1200V, 75A | DF951S1V54 600V, 10A | DF75LB80 800V, 75A |
| DF9B-31S-1V20 | DF75LB160 1600V, 75A | DFA100BA120 1200V, 100A | DF75LA80 800V, 75A |

