DF80R12W2H3_B11 Infineon - IGBT

Category: IGBT Modules

Specifications: 1200V, 80A

DF80R12W2H3_B11 IGBT from Eupec Infineon

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DF80R12W2H3_B11 Description

Rated at 1200 V and 80 A, the Infineon Technologies DF80R12W2H3_B11 is an IGBT. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

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Summary of Features

  • High Speed IGBT H3
  • Low Switching Losses
  • Al2O3 Substrate with Low Thermal Resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT Contact Technology

Target Applications

Infineon DF80R12W2H3_B11 is used for solar applications and UPS systems.

Key Specifications

DF80R12W2H3_B11 is a 1,200 V, 80 A diode. Source: manufacturer datasheet.

ParameterValue
Product typeDiode
Repetitive peak reverse voltage (VRRM)1,200 V
Rated forward / output current80 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF80R12W2H3_B11 (reply within 24 hours)

Related Part Numbers

DF80R12W2H3F_B11
80A/1200V		DF160R12W2H3F_B11
160A/1200V		DF75R12W1H4F_B11
1200V, 75A		DF150R12RT4
1200V, 150A
DF200R12KE3
1200V, 200A		DF300R12KE3
1200V, 300A		DF8MR12W1M1HF_B67DF1000R17IE4
DF1000R17IE4D_B2DF1400R12IP4DDF17MR12W1M1HF_B68DF225R12W2H3F_B11
DF300R07PE4_B6DF400R07PE4_B6DF400R12KE3DF900R12IP4D
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