DF80R12W2H3_B11 Infineon - IGBT Module

Category: IGBT Modules

Specifications: 1200V, 80A

DF80R12W2H3_B11 IGBT from Eupec Infineon

Representative image – actual product may differ

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

DF80R12W2H3_B11 Description

Rated at 1200 V and 80 A, the Infineon Technologies DF80R12W2H3_B11 is an IGBT. Typical uses include motor drives, servo amplifiers, induction heating, welding power sources and grid-tie inverters.

Need the DF80R12W2H3_B11? USComponent stocks and sources power modules for repair shops, OEMs and maintenance teams worldwide. Request a quote and we'll confirm availability and lead time. Always compare against the datasheet before ordering.

Summary of Features

  • High Speed IGBT H3
  • Low Switching Losses
  • Al2O3 Substrate with Low Thermal Resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT Contact Technology

Target Applications

Infineon DF80R12W2H3_B11 is used for solar applications and UPS systems.

Key Specifications

DF80R12W2H3_B11 is a 1,200 V, 80 A diode. Source: manufacturer datasheet.

ParameterValue
Product typeDiode
Repetitive peak reverse voltage (VRRM)1,200 V
Rated forward / output current80 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF80R12W2H3_B11 (reply within 24 hours)

Related Part Numbers

DF120R12W2H3_B27
1200V, 40A
DF200R07W2H3_B77
650V, 100A
DF200R12W1H3_B27
1200V, 30A
DF300R07W2H3_B77
650V, 150A
DF80R12W2H3F_B11
1200V, 80A
DF80R07W1H5FP_B11
650V, 40A
DF8MR12W1M1HF_B67
1200V, 50A
DF900R12IP4D
1200V, 900A
DF900R12IP4DV
1200V, 900A
DF75R12W1H4F_B11
1200V, 75A
DF951S1V54
600V, 10A
DF75LB80
800V, 75A
DF9B-31S-1V20DF75LB160
1600V, 75A
DFA100BA120
1200V, 100A
DF75LA80
800V, 75A