DF200R07W2H3_B77 Infineon - IGBT Module

Also written as: DF200R07W2H3-B77

Category: IGBT Modules

Specifications: 650V, 100A

DF200R07W2H3_B77 Infineon IGBT Module

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DF200R07W2H3_B77 Description

DF200R07W2H3_B77 is a 650 V / 100 A chopper / booster IGBT module from Infineon Technologies. Typical applications: three-level applications, Motor drives, Solar applications.

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Summary of Features

  • Increased blocking voltage capability up to 650 V
  • Low inductive design
  • Low switching losses
  • Al2O3 substrate with low thermal resistance
  • Compact design

Target Applications

Infineon DF200R07W2H3_B77 is used for Three-level applications, Motor drives, Solar applications.

Key Specifications

DF200R07W2H3_B77 is a 650 V / 100 A chopper / booster IGBT module from Infineon Technologies (EasyPACK 2B package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)100 A
PackageEasyPACK 2B
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF200R07W2H3_B77 (reply within 24 hours)