DF120R12W2H3_B27 Infineon - IGBT Module

Also written as: DF120R12W2H3-B27

Not for new designs: Infineon recommended replacement: DDB2U60N12W1RF_B11. We supply both the original DF120R12W2H3_B27 and the replacement - check the datasheets before switching.

Category: IGBT Modules

Specifications: 1200V, 40A

DF120R12W2H3_B27 Infineon IGBT Module

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DF120R12W2H3_B27 Description

DF120R12W2H3_B27 is a 1200 V / 40 A chopper / booster IGBT module from Infineon Technologies. Typical applications: solar applications.

USComponent supplies DF120R12W2H3_B27 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High speed IGBT H3
  • Low switching losses
  • 3 kV AC 1min insulation
  • Al2O3 substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT contact technology

Target Applications

Infineon DF120R12W2H3_B27 is used for Solar applications.

Key Specifications

DF120R12W2H3_B27 is a 1200 V / 40 A chopper / booster IGBT module from Infineon Technologies. Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)40 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF120R12W2H3_B27 (reply within 24 hours)

Related Part Numbers

DF80R12W2H3_B11
1200V, 80A		DF200R12W1H3_B27
1200V, 30A		DF200R07W2H3_B77
650V, 100A		DF300R07W2H3_B77
650V, 150A
DF1400R12IP4D
1200V, 1400A		DF11MR12W1M1_B11
1200V, 50A, RDS(on) 23mΩ		DF14MR12W1M1HF_B67
1200V, 30A		DF11MR12W1M1HF_B67
1200V, 25A
DF150AA120
1200V, 160A		DF100R07W1H5FP_B54
650V, 50A		DF150AA160
1600V, 150A		DF100R07W1H5FP_B53
650V, 50A
DF150AA160(0J22R)
1600(V) / 150(A)		DF100LB80
800V, 100A		DF150BA40
400V, 150A		DF100LB160
1600V, 100A
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