DF120R12W2H3_B27 Infineon - IGBT Module

Also written as: DF120R12W2H3-B27

Category: IGBT Modules

Specifications: 1200V, 40A

DF120R12W2H3_B27 Infineon IGBT Module

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DF120R12W2H3_B27 Description

DF120R12W2H3_B27 is a 1200 V / 40 A chopper / booster IGBT module from Infineon Technologies. Typical applications: solar applications.

USComponent supplies DF120R12W2H3_B27 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • High speed IGBT H3
  • Low switching losses
  • 3 kV AC 1min insulation
  • Al2O3 substrate with low thermal resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT contact technology

Target Applications

Infineon DF120R12W2H3_B27 is used for Solar applications.

Key Specifications

DF120R12W2H3_B27 is a 1200 V / 40 A chopper / booster IGBT module from Infineon Technologies. Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)40 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF120R12W2H3_B27 (reply within 24 hours)

Related Part Numbers

DF1000R17IE4DF1000R17IE4D_B2DF100R07W1H5FP_B53DF100R07W1H5FP_B54
DF11MR12W1M1HF_B67DF1400R12IP4DDF14MR12W1M1HF_B67DF150R12RT4
DF160R12W2H3F_B11DF16MR12W1M1HF_B67DF17MR12W1M1HF_B68DF17MR12W1M1HF_B86
DF10-48D05DF100AA120DF100AA160DF100BA40
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