DF80R07W1H5FP_B11 Infineon - IGBT Module

Also written as: DF80R07W1H5FP-B11

Category: IGBT Modules

Specifications: 650V, 40A

DF80R07W1H5FP_B11 Infineon IGBT Module

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DF80R07W1H5FP_B11 Description

DF80R07W1H5FP_B11 is a 650 V / 40 A chopper / booster IGBT module from Infineon Technologies.

USComponent supplies DF80R07W1H5FP_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • CoolSiC Schottky diode gen 5
  • Low switching losses
  • Low inductive design
  • Increased blocking voltage capability up to 650V
  • PressFIT contact technology
  • AlOs3 substrate with low thermal resistance
  • Integrated NTC temperature sensor

Target Applications

Infineon DF80R07W1H5FP_B11 finds applications in various industries and systems where high power switching is required.

Key Specifications

DF80R07W1H5FP_B11 is a 650 V / 40 A chopper / booster IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)650 V
Nominal collector current (IC nom)40 A
PackageEasyPACK
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF80R07W1H5FP_B11 (reply within 24 hours)

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