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DF80R07W1H5FP_B11 Infineon - IGBT Module
Also written as: DF80R07W1H5FP-B11
DF80R07W1H5FP_B11 Description
DF80R07W1H5FP_B11 is a 650 V / 40 A chopper / booster IGBT module from Infineon Technologies.
USComponent supplies DF80R07W1H5FP_B11 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.
Summary of Features
- CoolSiC Schottky diode gen 5
- Low switching losses
- Low inductive design
- Increased blocking voltage capability up to 650V
- PressFIT contact technology
- AlOs3 substrate with low thermal resistance
- Integrated NTC temperature sensor
Target Applications
Infineon DF80R07W1H5FP_B11 finds applications in various industries and systems where high power switching is required.
Key Specifications
DF80R07W1H5FP_B11 is a 650 V / 40 A chopper / booster IGBT module from Infineon Technologies (EasyPACK package). Source: Infineon datasheet and product table.
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Product type | IGBT module |
| Configuration | Chopper / booster |
| Collector-emitter voltage (VCES) | 650 V |
| Nominal collector current (IC nom) | 40 A |
| Package | EasyPACK |
| Datasheet | Available on this page (PDF) |
Technical document (PDF) | Request a quote for DF80R07W1H5FP_B11 (reply within 24 hours)
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