DF80R12W2H3F_B11 Infineon - IGBT

DF80R12W2H3F_B11 Description

Infineon Technologies DF80R12W2H3F_B11 is an IGBT rated at 1200 V and 80 A. Engineers use it mainly in the inverter section of motor drives, as well as in UPS, welding and power-conversion equipment.

USComponent has been supplying power semiconductors since 2001, including discontinued and hard-to-find part numbers. Send us an RFQ for the DF80R12W2H3F_B11 and we will reply with price, condition and lead time. Please check the manufacturer's datasheet to confirm ratings, package and pin-out before you order.

Summary of Features

Target Applications

Infineon DF80R12W2H3F_B11 is used for Solar Applications.

Key Specifications

DF80R12W2H3F_B11 is a 1,200 V, 80 A diode. Source: manufacturer datasheet.

Parameter	Value
Product type	Diode
Repetitive peak reverse voltage (VRRM)	1,200 V
Rated forward / output current	80 A
Datasheet	Available on this page (PDF)

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