DF200R12W1H3_B27 Infineon - IGBT Module

Also written as: DF200R12W1H3-B27

Category: IGBT Modules

Specifications: 1200V, 30A

DF200R12W1H3_B27 Infineon IGBT Module

Representative image – actual product may differ

Availability and lead time are confirmed in our quote.

  • ✓ Quote within 24 hours
  • ✓ Original manufacturer parts, inspected before shipping
  • ✓ Credit cards and NET terms accepted

Or email sales@uscomponent.com or call 1-281-968-0718.

DF200R12W1H3_B27 Description

DF200R12W1H3_B27 is a 1200 V / 30 A chopper / booster IGBT module from Infineon Technologies. Typical applications: solar Applications.

USComponent supplies DF200R12W1H3_B27 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low Switching Losses
  • Al2O33 Substrate with Low Thermal Resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT Contact Technology

Target Applications

Infineon DF200R12W1H3_B27 is used for Solar Applications.

Key Specifications

DF200R12W1H3_B27 is a 1200 V / 30 A chopper / booster IGBT module from Infineon Technologies. Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)30 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF200R12W1H3_B27 (reply within 24 hours)

Related Part Numbers

DF120R12W2H3_B27
1200V, 40A
DF200R07W2H3_B77
650V, 100A
DF80R12W2H3_B11
1200V, 80A
DF300R07W2H3_B77
650V, 150A
DF200R12W1H3F_B11
1200V, 30A
DF200R12PT4_B6
1200V, 200A
DF200R12KE3
1200V, 200A
DF200FA80
800V, 200A
DF200BA80
800V, 200A
DF200BA40
400V, 200A
DF200AA160
1600V, 200A
DF200AA120
1200V, 200A
DF20AA120
1200V, 20A
DF20AA160
1600V, 20A
DF20BA40
400V, 20A
DF20BA80
800V, 20A