DF200R12W1H3_B27 Infineon - IGBT Module

Also written as: DF200R12W1H3-B27

Category: IGBT Modules

Specifications: 1200V, 30A

DF200R12W1H3_B27 Infineon IGBT Module

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DF200R12W1H3_B27 Description

DF200R12W1H3_B27 is a 1200 V / 30 A chopper / booster IGBT module from Infineon Technologies. Typical applications: solar Applications.

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Summary of Features

  • Low Switching Losses
  • Al2O33 Substrate with Low Thermal Resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT Contact Technology

Target Applications

Infineon DF200R12W1H3_B27 is used for Solar Applications.

Key Specifications

DF200R12W1H3_B27 is a 1200 V / 30 A chopper / booster IGBT module from Infineon Technologies. Source: Infineon datasheet and product table.

ParameterValue
ManufacturerInfineon Technologies
Product typeIGBT module
ConfigurationChopper / booster
Collector-emitter voltage (VCES)1200 V
Nominal collector current (IC nom)30 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF200R12W1H3_B27 (reply within 24 hours)

Related Part Numbers

DF200R07W2H3_B77DF200R12KE3DF200AA120DF200BA40
DF200BA80DF200FA80DF20AA120DF20AA160
DF20BA40DF20BA80DF20CA120DF20CA160
DF20CA40DF20CA80DF20DB40DF20DB80
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