DF75R12W1H4F_B11Infineon - IGBT

DF75R12W1H4F_B11 Description

DF75R12W1H4F_B11 is a 1200 V, 75 A Infineon IGBT module, used for solar applications.

USComponent supplies DF75R12W1H4F_B11 and other Infineon power modules, including discontinued types. Download the datasheet or request a quote for pricing and availability.

Target Applications

Infineon DF75R12W1H4F_B11 is used for solar applications.

Key Specifications

Manufacturer	Infineon Technologies
Configuration	IGBT module with integrated NTC
Package	PressFIT contact technology
VCES	1200 V
IC nom / ICRM	75 A / 150 A
Isolation test voltage	2.5 kV RMS, 50 Hz, 1 min
Substrate	Al2O3, low thermal resistance
Weight	24 g
Operating junction temperature Tvj op	-40 to +150 °C

Download DF75R12W1H4F_B11 Datasheet

DF75R12W1H4F_B11 PDF Datasheet