DF75R12W1H4F_B11 Infineon - IGBT

Category: IGBT Modules

Specifications: 1200V, 75A

DF75R12W1H4F_B11 Infineon IGBT

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DF75R12W1H4F_B11 Description

DF75R12W1H4F_B11 is a 1200 V, 75 A Infineon IGBT module, used for solar applications.

USComponent supplies DF75R12W1H4F_B11 and other Infineon power modules, including discontinued types. Download the datasheet or request a quote for pricing and availability.

Summary of Features

  • Low Switching Losses
  • Al2O3 Substrate with Low Thermal Resistance
  • Integrated NTC temperature sensor
  • Compact design
  • PressFIT Contact Technology

Target Applications

Infineon DF75R12W1H4F_B11 is used for solar applications.

Key Specifications

DF75R12W1H4F_B11 is a 1,200 V, 75 A diode. Source: manufacturer datasheet.

ParameterValue
Product typeDiode
Repetitive peak reverse voltage (VRRM)1,200 V
Rated forward / output current75 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for DF75R12W1H4F_B11 (reply within 24 hours)

Related Part Numbers

DF80R12W2H3F_B11
80A/1200V		DF160R12W2H3F_B11
160A/1200V		DF80R12W2H3_B11
80A/1200V		DF150R12RT4
1200V, 150A
DF200R12KE3
1200V, 200A		DF300R12KE3
1200V, 300A		DF75AA120DF75AA160
DF75AA160MDF75BA40DF75BA80DF75BA80M
DF75LA120DF75LA160DF75LA80DF75LB160
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