DF8MR12W1M1HF_B67 Infineon - SiC MOSFET Module

Category: MOSFET Modules

Specifications: 1200V, 50A

DF8MR12W1M1HF_B67 Infineon SiC MOSFET Module

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DF8MR12W1M1HF_B67 Description

DF8MR12W1M1HF_B67 is a 1200 V, 50 A Infineon EasyPACK SiC MOSFET module (booster), used for solar applications.

USComponent supplies DF8MR12W1M1HF_B67 and other Infineon power modules. Request a quote for price and lead time - we reply within 24 hours.

Summary of Features

  • Low inductive design
  • High current density
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • Rugged mounting due to integrated mounting clamps

Target Applications

Infineon DF8MR12W1M1HF_B67 is used for solar applications.

Key Specifications

DF8MR12W1M1HF_B67 is a 1,200 V, 50 A Infineon EasyPACK SiC MOSFET module. Source: manufacturer datasheet.

ParameterValue
Product typeSiC MOSFET module
ConfigurationBooster (chopper)
Drain-source voltage (VDSS)1,200 V
Drain current (IDN)50 A
TechnologyCoolSiC Trench MOSFET (M1H)
PackageEasyPACK

Technical document (PDF)  |  Request a quote for DF8MR12W1M1HF_B67 (reply within 24 hours)

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