MG150Q2YS51Toshiba - Power Transistor Module

MG150Q2YS51 Description

The Toshiba MG150Q2YS51 is a power semiconductor module rated at 1200 V and 200 A, available from USComponent. Components of this type are commonly used in motor drives, power conversion and industrial control equipment.

USComponent specializes in sourcing power modules and industrial electronic components, including legacy and hard-to-find parts for repair and maintenance. Please confirm ratings, package and pin-out against the manufacturer's datasheet before ordering, and request a quote for current pricing and lead time on the MG150Q2YS51.

Target Applications

Toshiba MG150Q2YS51 is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-109C4A
VCES	1200 V
IC	200 / 150 A (DC)
ICP	400 / 300 A (1 ms)
VCE(sat) max.	3.6 V
Weight	430 g
Junction temperature	150 °C max.

MG150Q2YS51 Video

Download MG150Q2YS51 Datasheet

MG150Q2YS51 PDF Datasheet