MG150Q2YS51 Toshiba - Power Transistor Module

MG150Q2YS51 Description

Toshiba makes the MG150Q2YS51, a 1200 V IGBT module. The module contains two switches in a half-bridge (2-in-1) arrangement. You'll typically find it in variable-frequency drives, servo amplifiers, UPS systems, welding machines and solar or wind inverters.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG150Q2YS51; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Target Applications

Toshiba MG150Q2YS51 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

Manufacturer	Toshiba
Configuration	Dual IGBT module (complete half bridge) with free-wheeling diodes
Package	Toshiba 2-109C4A
VCES	1200 V
IC	200 / 150 A (DC)
ICP	400 / 300 A (1 ms)
VCE(sat) max.	3.6 V
Weight	430 g
Junction temperature	150 °C max.

MG150Q2YS51 Video

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