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MG300Q2YS61

Specifications:

1200(V) / 300(A)

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MG300Q2YS61 IGBT Power Transistor Module from Toshiba



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MG300Q2YS61 Description

Silicon N Channel IGBT TRANS IGBT MODULE N-CH 1200V 300A 7(2-109C4A)

Summerry of Features

MG300Q2YS61 is a(n) 1200(V) / 300(A) Power Transistor Modules. .

Target Applications

MG300Q2YS61 is used for High Power Switching Applications and Motor Control Applications

Download MG300Q2YS61 Datasheet

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