MG25Q2YS40EPToshiba - IGBT Power Transistor Module

MG25Q2YS40EP Description

Toshiba MG25Q2YS40EP is an IGBT module rated at 1200 V and 25 A. This type of device is widely used in variable-frequency motor drives, servo drives, UPS systems, welding machines, induction heating and solar or wind inverters.

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Target Applications

Toshiba MG25Q2YS40EP is used for High Power Switching Applications and Motor Control Applications.

Key Specifications

Manufacturer	Toshiba
Category	IGBT Power Transistor Module
Rated voltage	1200 V
Rated current	25 A

Download MG25Q2YS40EP Datasheet

Datasheet not available