MG20Q6EK1 Toshiba - Bipolar Transistor Module

Category: IGBT Modules

Specifications: 1200V, 20A

MG20Q6EK1, Toshiba, Power Module

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MG20Q6EK1 Description

Toshiba makes the MG20Q6EK1, a 900 V, 20 A IGBT module. The module contains six switches arranged as a three-phase bridge (6-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent is a BBB A+ accredited distributor that specializes in power modules and industrial components, new and legacy. Ask us for a quote on the MG20Q6EK1; we ship worldwide. Please verify the ratings and package against the manufacturer's datasheet first.

Summary of Features

MG20Q6EK1 is a 1,200 V, 20 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG20Q6EK1 is used for inverters and AC motor drives, servo drives, UPS systems, welding machines, induction heating, solar and wind power converters and other high-power switching equipment.

Key Specifications

MG20Q6EK1 is a 1,200 V, 20 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)20 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG20Q6EK1 (reply within 24 hours)

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