MG100M2YK1 Toshiba - Power Transistor Module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1000V, 100A

MG100M2YK1, Toshiba, Power Module

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MG100M2YK1 Description

Toshiba MG100M2YK1 is an IGBT / power transistor module rated at 1000 V and 100 A. It was a workhorse in drives and power supplies before IGBTs took over, and it is still needed to repair that equipment.

We help engineers and repair technicians find parts like the MG100M2YK1, including obsolete ones. Send a quick RFQ for current pricing and delivery. Before ordering, please confirm ratings and pin-out with the official datasheet.

Summary of Features

MG100M2YK1 is a 100 A IGBT / power transistor module.

Target Applications

Toshiba MG100M2YK1 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG100M2YK1 is a 100 A IGBT / power transistor module. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
Collector current (IC)100 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG100M2YK1 (reply within 24 hours)

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