MG15Q6ES42 Toshiba - GTR module

Category: Darlington / Bipolar Transistor Modules

Specifications: 1200V, 15A

MG15Q6ES42, Toshiba, Power Module

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MG15Q6ES42 Description

Toshiba MG15Q6ES42 is an IGBT module rated at 1200 V and 15 A. The module contains six switches arranged as a three-phase bridge (6-in-1). It is a common choice for inverter stages in AC drives, servo systems, welders and uninterruptible power supplies.

USComponent (Young & New Century LLC) supplies power modules, thyristors, diodes and other industrial components, including legacy parts. Contact us for a quote on the MG15Q6ES42, and please confirm ratings against the datasheet before ordering.

Summary of Features

MG15Q6ES42 is a 1,200 V, 15 A IGBT / power transistor module, six-pack configuration.

Target Applications

Toshiba MG15Q6ES42 is used for motor drives and inverters, servo amplifiers, UPS systems, welding machines and other industrial power switching equipment.

Key Specifications

MG15Q6ES42 is a 1,200 V, 15 A IGBT / power transistor module, six-pack configuration. Source: manufacturer datasheet.

ParameterValue
Product typeIGBT / power transistor module
ConfigurationSix-pack
Collector-emitter voltage (VCES)1,200 V
Collector current (IC)15 A
DatasheetAvailable on this page (PDF)

Technical document (PDF)  |  Request a quote for MG15Q6ES42 (reply within 24 hours)